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NXP Semiconductors
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
Table 8. Characteristics
T amb = 25 ° C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per channel
I R
C (I/O-GND)
reverse current
input/output to ground
V R = 5 V
f = 1 MHz;
[1]
[1]
-
-
<1
1.0
100
1.5
nA
pF
capacitance
V (I/O-GND) = 0 V
C (I/O-I/O)
input/output to input/output
f = 1 MHz;
[2]
-
0.6
-
pF
capacitance
V (I/O-I/O) = 0 V
V F
forward voltage
I F = 1 mA
[3]
-
0.7
-
V
Zener diode
V RWM
V BR
reverse standoff voltage
breakdown voltage
[4]
[4]
-
6
-
-
5.5
9
V
V
C sup
supply pin to ground
f = 1 MHz;
[4]
-
16
-
pF
capacitance
V CC = 0 V
[1]
[2]
[3]
[4]
Measured from pin 1, 3, 4 or 6 to ground.
Measured from pin 1 or 6 to pin 3 or 4.
Measured from pin 1, 3, 4 or 6 to pin 5.
Measured from pin 5 to ground.
2.0
C (I/O-GND)
(pF)
1.6
1.2
0.8
0.4
0
006aaa483
1.0
C (I/O-I/O)
(pF)
0.8
0.6
0.4
0.2
0
006aaa484
0
1
2
3
4
5
0
1
2
3
4
5
f = 1 MHz; T amb = 25 ° C
V (I/O-GND) (V)
f = 1 MHz; T amb = 25 ° C
V (I/O-I/O) (V)
Fig 2.
Input/output to ground capacitance as a
Fig 3.
Input/output to ground capacitance as a
PRTR5V0U2D_1
function of input/output to ground voltage;
typical values
function of input/output to input/output
voltage; typical values
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 28 April 2009
5 of 12
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